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| DTA114EXV3T1 Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. http://onsemi.com PNP SILICON DIGITAL TRANSISTORS * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape & Reel Lead-Free Plating (Pure Sn) PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 3 1 2 SC-89 CASE 463C STYLE 1 MARKING DIAGRAM 3 xx D 1 2 xx = Specific Device Code (See Marking Table on page 2) D = Date Code Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 0 Publication Order Number: DTA114EXV3T1/D DTA114EXV3T1 Series DEVICE MARKING AND RESISTOR VALUES Device DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 Marking 6A 6B 6C 6D 6E 6F 6P 6T 6R R1 (K) 10 22 47 10 10 4.7 47 47 4.7 R2 (K) 10 22 47 47 22 10 Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 Inch Pad. Symbol PD 200 1.6 RJA PD 300 2.4 RJA TJ, Tstg 400 -55 to +150 mW mW/C C/W C 600 mW mW/C C/W Max Unit http://onsemi.com 2 DTA114EXV3T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 ICBO ICEO IEBO - - - - - - - - - - - 50 50 - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 0.13 0.2 1.0 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 hFE 35 60 80 80 160 160 80 160 20 - 60 100 140 140 250 250 140 250 35 - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5.0 mA) DTA123EXV3T1 (IC = 10 mA, IB = 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1/ DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) DTA114EXV3T1 DTA124EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144EXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 VCE(sat) VOL - - - - - - - - - VOH 4.9 - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTA114TXV3T1 DTA143TXV3T1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. Vdc http://onsemi.com 3 DTA114EXV3T1 Series ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Characteristic Input Resistor DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 DTA114EXV3T1/DTA124EXV3T1/ DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1/DTA143TXV3T1/ DTA144TXV3T1 DTA144WXV3T1 DTA143XXV3T1 Symbol R1 Min 7.0 15.4 32.9 7.0 7.0 3.3 32.9 32.9 3.3 0.8 0.17 - 1.7 0.38 Typ 10 22 47 10 10 4.7 47 47 4.7 1.0 0.21 - 2.1 0.47 Max 13 28.6 61.1 13 13 6.1 61.1 61.1 6.1 1.2 0.25 - 2.6 0.56 Unit k Resistor Ratio R1/R2 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 -50 RJA = 600C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Normalized Thermal Response http://onsemi.com 4 DTA114EXV3T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA114EXV3T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 7. Input Voltage versus Output Current http://onsemi.com 5 DTA114EXV3T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA124EXV3T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 8. VCE(sat) versus IC Figure 9. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 12. Input Voltage versus Output Current http://onsemi.com 6 DTA114EXV3T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA144EXV3T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C TA = -25C 0.1 75C 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75C 25C -25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 15. Output Capacitance Figure 16. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 17. Input Voltage versus Output Current http://onsemi.com 7 DTA114EXV3T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA114YXV3T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 18. VCE(sat) versus IC Figure 19. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 22. Input Voltage versus Output Current http://onsemi.com 8 DTA114EXV3T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- DTA144WXV3T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C TA = -25C 75C 0.1 100 25C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 25C TA = -25C 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V +12 V 10 TA = -25C 75C Typical Application for PNP BRTs LOAD 1 25C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 27. Input Voltage versus Output Current Figure 28. Inexpensive, Unregulated Current Source http://onsemi.com 9 DTA114EXV3T1 Series PACKAGE DIMENSIONS SC-89 CASE 463C-03 ISSUE C A -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF --- --- 10 _ --- --- 10 _ 0.059 0.063 0.067 3 1 2 B -Y- S K G 2 PL DIM A B C D G H J K L M N S D 0.08 (0.003) M 3 PL XY MIN 0.059 0.030 0.024 0.009 M C N J -T- SEATING PLANE STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 DTA114EXV3T1/D |
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